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We report the results of a systematic study to understand low drive current of Ge-based nMOSFET. The poor electron transport property is primarily attributed to the intrinsically low density of state and high conductivity effective masses. Results are supported by interface trap density (Dit) and specific contact resistivity (rhoc), which are comparable (or symmetric) for both n- and p-MOSFETs. Effective...
For the first time strain additivity on III-V using prototypical (100) GaAs n- and p-MOSFETs is studied via wafer bending experiments and piezoresistance coefficients are extracted and compared with those for Si and Ge MOSFETs. Further understanding of these results is obtained by using multi-valley conduction band model for n-MOS and performing k.p simulations for p-MOS. For GaAs n-MOSFET, uniaxial...
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