A simple room‐temperature process of depositing MXene on a III‐V structure with embedded 2D electron gas (2DEG) is used, which results in a large area,
, photodetector (PD) device that greatly outperforms vacuum deposited Ti/Au metal‐semiconductor‐metal (MSM) PD's. By co‐optimizing properties of 2D MXene contacts and the III‐V material heterojunctions, this device...