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In this work, we report on fully ion implanted 156 × 156 mm2 n‐type PERT solar cells fabricated in an industry‐capable process. The implant damage of phosphorous and boron was co‐annealed in a single furnace annealing step. The cells feature a screen‐printed front side metallization and an evaporated rear side metallization. The influence of boron emitter profile on the open‐circuit voltage VOC and...
Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-type solar cells, e.g. for passivated emitter and rear, totally doped (PERT) cells. Although fully ion-implanted high efficiency solar cells have been reported recently, annealing of crystal defects resulting from B implantation is still challenging. We present structural investigations of implant-induced...
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