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It has recently been shown that low resistance Ohmic contact to lightly doped n-type crystalline silicon (c-Si) is possible by direct metallization via a thin layer of the low work function metal calcium (φ ∼2.9 eV) and an overlying aluminium capping layer. Using this approach upper limit contact resistivities of < 2 mΩcm2 can be realised on undiffused n-type surfaces. However, recombination at...
The potential for organic electronic technologies to produce low-cost energy at large scales is often cited as the most attractive feature of these materials. Such aspirations depend on the ability of materials to be printed from solution at high speeds across large areas using roll-to-roll (R2R) processing. However, progressing the technology from the laboratory environment into the industrial manufacturing...
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