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One of the key requirements to achieve solar conversion efficiencies greater than 50% is a photovoltaic device with a band gap of 2.4 eV or greater. lnxGa1-xN is one of a few alloys that can meet this key requirement. InGaN with indium compositions varying from 0 to 40% is grown by both metal-organic, chemical-vapor deposition (MOCVD) and molecular beam epitaxy (MBE), and studied for suitability in...
We present the direct observation of majority and minority carrier defects in InGaAsN diodes and solar cells before and after 1-MeV electron irradiation by deep level transient spectroscopy (DLTS). A hitherto existing nitrogen-related electron trap, E1, (0.20 eV) shows a significant increase in concentration after 1-MeV electron irradiation. In addition, 1-MeV electron irradiation induced a hole trap,...
We present here a new approach to tandem cell design that offers near-optimum subcell bandgaps, as well as other special advantages related to cell fabrication, operation, and cost reduction. Monolithic, ultra-thin GaInP/GaAs/GaInAs triple-bandgap tandem solar cells use this new approach, which involves inverted epitaxial growth, handle mounting, and parent substrate removal. The optimal ~1-eV bottom...
It is well known that the efficiency of GaInP/GaAs tandem solar cells is limited by the band gap of the GaInP top cell, which, in turn, is determined by the degree of compositional ordering in the GaInP base layer. Attempts to raise the band gap by the addition of Al to the top cell have met with limited success due to the strong affinity between Al and oxygen. Here we investigate a different approach...
The first GaInNAsSb solar cells are reported. The dilute nitride antimonide material, grown by molecular beam epitaxy, has a bandgap of 0.92 eV and maintains excellent carrier collection efficiency. Internal quantum efficiency of nearly 80% at maximum is obtained in the narrow bandgap GaInNAsSb cells. The short-circuit current density produced by the GaInNAsSb cells underneath a GaAs sub-cell in a...
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