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The first GaInNAsSb solar cells are reported. The dilute nitride antimonide material, grown by molecular beam epitaxy, has a bandgap of 0.92 eV and maintains excellent carrier collection efficiency. Internal quantum efficiency of nearly 80% at maximum is obtained in the narrow bandgap GaInNAsSb cells. The short-circuit current density produced by the GaInNAsSb cells underneath a GaAs sub-cell in a...
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