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The organometallic vapor phase epitaxy growth of zinc-blende BxGa1−xAs and BxGa1−x−yInyAs with boron concentrations (x) up to 3–5% has recently been demonstrated using diborane as a boron precursor. Growth of these alloys using diborane is complicated by many factors, such as parasitic gas-phase reactions, highly temperature-dependent boron incorporation, and limited boron incorporation before the...
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