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We have grown device-quality epitaxial silicon thin films at growth rates up to 1.85 μm/min, using hot-wire chemical vapor deposition from silane, at substrate temperatures below 750°C. At these rates, which are more than 30 times faster than those used by the amorphous and nanocrystalline Si industry, capital costs for large-scale solar cell production would be dramatically reduced, even for cell...
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