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It is desirable to imitate synaptic functionality to break through the memory wall in traditional von Neumann architecture. Modulating heterosynaptic plasticity between pre‐ and postneurons by another modulatory interneuron ensures the computing system to display more complicated functions. Optoelectronic devices facilitate the inspiration for high‐performance artificial heterosynaptic systems. Nevertheless,...
In article number 1805431, Qing Yang, Ye Zhou, Su‐Ting Han, and co‐workers demonstrate modulated heterosyntic plasticity based on a resistive memory device fabricated with MoSe2/Bi2Se3 heterostructured nanosheets. By modulating the synaptic plasticity between pre‐ and post‐neurons with near‐infrared light, the synaptic system displays more complicated functions.
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