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A hybrid double‐floating‐gate flexible memory device by utilizing an rGO‐sheet monolayer and a Au NP array as upper and lower floating gates is reported. The rGO buffer layer acts as a charge‐trapping layer and introduces an energy barrier between the Au NP lower floating gate and the channel. The proposed memory device demonstrates a strong improvement in both field‐effect‐transistor (FET) and memory...
V. A. L. Roy and co‐workers report on page 872 a hybrid double floating gate low voltage flexible flash memory device by utilizing rGO sheets monolayer and Au NPs array as upper and lower floating gates respectively. As a buffer layer, rGO traps charges and also introduces an energy barrier between Au NPs and the channel, eventually enhancing both the retention time and memory window. The proposed...
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