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In article number 1803563, Feng Wang, Ye Zhou, Su‐Ting Han, and co‐workers develop an NIR photonic memristor based on a MoS2–upconversion nanoparticle heterostructure. The heterostructure, acting as exciton generation/separation centers, remarkably improves NIR‐light‐controlled memory performance. Meanwhile, the as‐fabricated photonic memory array also displays high integration with photodetectors,...
Photonic memories as an emerging optoelectronic technology have attracted tremendous attention in the past few years due to their great potential to overcome the von Neumann bottleneck and to improve the performance of serial computers. Nowadays, the decryption technology for visible light is mature in photonic memories. Nevertheless, near‐infrared (NIR) photonic memristors are less progressed. Herein,...
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