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Magnesium silicide (MgSi) on Si use in Tunnel FET source-channel region that can improve the drive current to 2 order and more. In this work, we propose to deposit Mg and Si for multi-stacks by RF magnetron sputtering and evaluated the firmed Mg2Si. That has an atomically flat interface and surface are formed before and after annealing and Mg atoms encroachment into Si, therefore the Mg2Si on Si was...
This study investigates between the removal rate and the several behavior analysis parameters in the chemical mechanical polishing (CMP) of the sapphire substrate. In particular, the platen temperature set by the chiller unit, the acceleration of a polishing head, the coefficient of friction, the polishing pad surface temperatures during the sapphire-CMP were selected as the evaluation parameters...
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