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High-quality ZnO1−xSx thin films were grown on (001) sapphire substrates in the temperature range of 300–800°C by pulsed laser deposition (PLD) with a ZnS ceramic target and O2 as reactive gas. By increasing the substrate temperature, the crystalline quality of the films is enhanced. The S content in the single-phase ZnO1−xSx films can be systematically adjusted from 0.556 to 0.202 via changing the...
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