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This paper investigates the reliability of junctionless MOSFETs based inverter by 3D TCAD simulation. The results show the I–V behavior of junctionless SOI-MOSFETs is highly resistant to accumulated fixed charge in oxide. Then the performance of junctionless device-based inverter is discussed. VM of juncitonless device-based inverter maintains within 0.05V and the transient response time shows very...
As a basic logic unit of integrated circuit, the stability of parameters of inverter have a direct effect on the performance of system. This paper starts from parametric drift of traditional inverter caused by the variation of threshold voltage of MOSFET. Then a new parametric drift-resistant inverter is proposed. This structure utilizes compensation circuit to solve parametric drift such as the decrease...
Basic structure of latch-type SRAM sense amplifier is analyzed and advantages and disadvantages are compared in this paper, then an improved latch-type SRAM sense amplifier is presented. On this basis, a new sense amplifier is proposed, which can access data fast for low voltage and low power SRAM application. The simulation results show that this sense amplifier has advantage over the conventional...
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