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AlGaAs/GaAs heterostructures having different thicknesses of AlGaAs layers have been grown by Molecular Beam Epitaxy. Detailed Structural characterization of these structures has been performed and discussed in this report. AlGaAs layer thicknesses have been measured by an electrochemical Capacitance-Voltage profiler by etch profiling and confirmed by field emission scanning electron eicroscopy and...
High quality pseudomorphic Al0.15Ga0.85As/GaAs heterostructure was grown on an semi-insulating GaAs(100) substrate by Molecular Beam Epitaxy(MBE). Analysis of this structure was done by Photoluminescence (PL), HALL and High Resolution X-Ray diffraction (HRXRD). The nominal structure was confirmed by HRXRD, and aluminum mole fraction was measured from peak separation of the AlGaAs-GaAs (004) reflections...
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