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Nanoscale double-gate n-MOSFETs with silicon and III-V (GaAs and InAs) channels are studied using numerical simulation. The device structures are based on the ITRS 14 nm node (year 2020), and are simulated using the program nanoMOS, which utilizes the NEGF technique for treating ballistic electron transport in the channel. The effective masses used are obtained by extraction from the full band structure...
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