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This paper proposes a dual‐band asymmetric Doherty power amplifier (ADPA) with 9 dB power back‐off range using dual parallel peaking amplifiers to realize reactance compensation for wideband operation at two frequency bands. To achieve dual‐band amplification, the specific phase delays of the carrier and peaking output matching networks (OMNs) required on the two target frequency bands were determined...
This paper presents the methods to improve load modulation in Doherty along with two modified GaN Doherty power amplifiers (PAs) with high efficiency and linearity at large back-off power for 100 MHz LTE-advanced application. To improve load modulation, the peaking amplifier is designed to achieve similar output current with that of the carrier amplifier by choosing optimal load impedances in class...
This paper presents a high-efficiency broadband GaN HEMT class-F Doherty Power amplifier at 3.5GHz for LTE-Advanced applications. The carrier and peak amplifier of the Doherty amplifier both adopts class-F design strategy to obtain higher efficiency, in which the transmission-line harmonic suppression network for controlling the second and third harmonics is employed. Measurement results show that...
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