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<?Pub Dtl?>We have investigated the total ionizing dose (TID) radiation effects in AlGaN/GaN MOS-HEMTs as a function of dose and radiation bias, and compared them with conventional HEMTs. Under 10 keV X-ray irradiation, two distinct regimes of threshold voltage shifts have been revealed: a rapid shift at low doses for both HEMTs and MOS-HEMTs, and...
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