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In this paper, a five-section waveguide E-plane bandpass filter is presented. The E band waveguide filter circuit parameters and the waveguide filter are analyzed and optimized by electromagnetic simulation software, such us HFSS, the insertion loss is less than 1 dB in the passband from 72.27 to 73.73GHz, the center frequency of waveguide filter is 73GHz, the relative bandwidth is above 2 %, the...
This paper present the design of E-band E-plane bandpass waveguide filter with the E-plane inserted metal strip. And the waveguide filter is analyzed and optimized by filter structure character. In simulation, the E band waveguide electromagnetic simulation software according to the waveguide filter is operated from 72.2GHz to 73.8GHz with the maximum insertion loss of 0.41dB. And the relative bandwidth...
This paper uses HFSS (High Frequency Structure Simulator) by Ansoft Crop. to simulate an iris filter with center frequency of 110GHz and with relative bandwidth of 10%. The simulation results show that the center frequency is 109.74GHz and the 3dB bandwidth is 10.01%. Over the entire passband, the return loss is better than 13.56dB. The filter presents a steep cutoff, the insertion loss at the frequency...
In this paper, a novel four-section waveguide E-plane bandpass filter with two pieces of metal cut at both sides is presented. In this filter, in order to improve the performance of the band rejection, loaded cavity is designed instead of air cavity. The insertion loss is less than 1.5 dB in the passband from 91.4 to 94.9 GHz. The lower rejection is larger than 40 dB from 75 to 87.6 GHz, while the...
In this paper, a rectangular waveguide based in phase H-T power divider is presented. The cavity is split in two with the whole circuit on one half and the metal cover on the other in order to guarantee the performance. Good agreement has been achieved between the numerical and the experimental results. The signal is fed from port 1 and outputted from port 2 and port 3 respectively. The transmission...
On-chip transmission lines are basic components in millimeter-wave and terahertz circuits. In this paper, slow-wave CPW with a simple mosfet switch, ie. controllable slow-wave CPW as a controllable phase delay line are designed, characterized and analyzed in a commercial 0.18 μm CMOS process. Based on measured two-port S-parameters up to 110 GHz, the phase constants are compared at variation of the...
Computer tomography (CT) image geometric artifacts are a kind of the pseudo-image not existing in the detected object, which could result in a serious degradation of image quality. Geometric artifacts are imported by the discrepancies between the geometric structure of cone-beam CT and the ideal structure of reconstruction algorithm. Analyzing the FDK algorithm, there are seven parameters that describe...
This paper presents a new concept of 3D transformer structure realized by through silicon via (TSV) technology. A set of different turn ratio transformers have been designed and analyzed. The results show that the proposed 3D TSV transformer possesses good performance with small size. Finally, an AC to DC converter circuit which based on proposed transformer has been designed. The result demonstrates...
A design approach of Lange coupler for Si-substrate monolithic microwave integrated circuits is presented for frequency range up to 170 GHz. A combination of odd- and even-mode impedance theory and 3D EM simulation is proposed to improve the performance of Lange coupler. The value of the even number of the strip lines is determined based on the even-mode impedance calculation according to the process...
A new trench IGBT with carrier bypass region is proposed in paper. In this new structure, P+ bypass regions are introduced, which provided hole carrier bypass, reduced the parasitic thyristor effect in the trench IGBT, allowed higher safe operating area. The results are shown that the temperature characteristic of the new trench IGBT is better than that of the conventional trench IGBT. The metal which...
A novel NFFP HVI structure which implements high breakdown voltage without using additional FFP and process steps is proposed in this paper. An 850 V half bridge gate drive IC with the NFFP HVI structure is experimentally realized by using a thin epitaxial high voltage BCD process. Compared with the conventional MFFP HVI structure, the proposed NFFP HVI structure shows simpler process and lower cost...
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