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Photoluminescence (PL) properties of Eu‐doped ZnO (ZnO:Eu) grown by a sputtering‐assisted metalorganic chemical vapor deposition technique were investigated. In PL measurements under the high‐energy excitation above the band‐gap energy of ZnO (indirect‐excitation) at room temperature, the annealed sample showed clear red‐emission lines due to the intra‐4f shell transition of 5D0→7F2 in Eu3+. Under...
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