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An analytical charge-sheet drain current model for monolayer transition metal dichalcogenide negative capacitance field-effect transistors (TMD NC-FETs) is proposed by solving the Schrodinger’s equation, the Pao-Sah current formulation, and the Landau-Khalatnikov equation. Results predicted by the developed analytical model agree well with the experimental data. An amplified semiconductor surface...
An analytical electrostatic potential model for Junctionless Cylindrical Surrounding-Gate (JLCSG) MOSFETs was developed by solving the 2-D Poisson equation based on a method of series expansion similar to Green's function. Subthreshold behavior was studied in detail by changing different device parameters and bias conditions, including doping concentration, channel thickness, gate length, gate oxide...
The overshooting effect, which is induced by the input-to-output coupling capacitance, has an significant effect on CMOS gate delay with the scaling of CMOS technology. In this paper, an effective analytical model is proposed to calculate the overshooting time of multiple-input gates. The proposed model is verified having a good agreement with SPICE simulation results.
Recently, tunnel Field Effect Transistor (TFET) has attracted lots of attention for the low power application since its potential to obtain a steeper subthreshold slope (SS) than conventional MOSFET. So far, only a few one- and two-dimensional (2D) analytical models [1-2] have been reported. However, among these models, the influence of substrate electric field is not included, and the band-to-band...
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