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The underlying mechanism of the transition temperature in ferroelectric 2D SnTe films with a thickness of as little as 2 atomic layers is determined by Stuart S. P. Parkin and co‐workers, as described in article number 1804428. The observed high transition temperature, together with the strong spin‐orbit coupling and van der Waals structure, underlines the potential of atomically thin γ‐SnTe films...
2D SnTe films with a thickness of as little as 2 atomic layers (ALs) have recently been shown to be ferroelectric with in‐plane polarization. Remarkably, they exhibit transition temperatures (Tc) much higher than that of bulk SnTe. Here, combining molecular beam epitaxy, variable temperature scanning tunneling microscopy, and ab initio calculations, the underlying mechanism of the Tc enhancement...
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