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Infra-red spectroscopy as an effective tool used to establish platelet like configuration in nanocrystalline silicon thin films (nc-Si:H). These films were deposited using 60 MHz assisted very high frequency plasma enhanced chemical vapor deposition process with varying pressure from 4 to 40 Pa. The deposited films were characterized by X-ray diffraction (XRD), Field emission scanning electron microscopy...
Investigation of carrier transport in hydrogenated amorphous silicon (a-Si:H) thin films deposited at various pressures (0.03 - 0.53 Torr) using 27.12 MHz assisted high frequency Plasma Enhanced Chemical vapor Deposition (PECVD) process is presented. From results of Steady State Photocarrier Grating (SSPG) the carrier diffusion length was found to vary from 0.098 - 0.189 μm. Moreover a direct influence...
The performance parameter of a surface plasmon resonance sensor having silicon carbide as an additional layer is theoretically investigated. Using the transfer matrix method, the reflectivity and performance parameter in terms of sensitivity, detection accuracy and quality parameter have been calculated. To understand the dependency of sensitivity and detection accuracy in the proposed sensor, the...
In this work, through modeling we propose how the choice of the TCO material, its texturing and optimization of band gap of a-Si:H layers help to increase the efficiency of a-Si:H solar cells. While selecting plane and textured indium tin oxide (ITO) and zinc oxide (ZnO) as TCOs, the solar cell parameters and performance are examined as a function of band gap of different a-Si:H layers. The optimum...
The occurrence of a photonic band gap modulation in the periodic arrangement of a Si-SiO2 layer, in the presence of in-plane acoustic plate symmetric modes is studied. The proposed structure shows simultaneous existence of photonic band gaps in the infrared region and phononic band gaps in the GHz frequency range. Due to the presence of photonic band gaps and phononic band gaps, this arrangement is...
A mixed-phase of amorphous (a-Si:H) and ultra nanocrystalline silicon thin films (ultra nc-Si:H) were grown in a low deposition pressure regime (0.10–0.62 Torr) using a very high frequency (60 MHz) plasma enhanced chemical vapor deposition (VHF PECVD) technique. The deposition rate, stress, hydrogen configuration and morphology varying with the deposition pressure were systematically studied. The...
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