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The advantages of ultraviolet light-emitting diodes (LEDs) inserted with a p-AlGaN layer, whose Al mole composition is less than that of the last barrier, between the last barrier and the electron blocking layer have been investigated by using the Crosslight APSYS programs. The results show that the output power and the internal quantum efficiency of the proposed LEDs are improved. Furthermore, the...
The advantages of blue InGaN light-emitting diodes (LEDs) with thickness-chirped barriers in the active region have been investigated by using the Crosslight APSYS programs. The results show that the output power of the proposed LED is increased 80% and the efficiency droop is decreased from 59% in conventional LED to 28% at the current of 250 mA. Based on the analysis of electrical and optical characteristics,...
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