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The GaN epitaxial layer was grown by hydride vapor-phase epitaxy (HVPE) on Si(111) substrate with AlN buffer layer. Structural and optical properties of GaN layer were characterized by high-resolution X-ray diffraction, transmission electron microscopy (TEM) and photoluminescence (PL) measurements. TEM images showed that the dislocation density in the GaN layer was ∼9×10 9 /cm 2 ....
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