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While most of the work in the literature focuses on stability conditions for event-triggered systems, in this technical note we focus on passivity and passivation of event-triggered feedback interconnected systems of two input feed-forward output-feedback (IF-OF) passive systems. Passivity indices (levels) are used to measure the excess or shortage of passivity. It is shown that passivity indices...
Passivity indices are used to measure the excess or shortage of passivity. While most of the work in the literature focuses on stability conditions for interconnected systems using passivity indices, here we focus on passivity and passivation of the feedback interconnection of two input feed-forward output-feedback (IF-OF) passive systems. The conditions are given to determine passivity indices in...
Charge trapping and wearout characteristics of self-aligned enhancement-mode GaAs nMOSFETs with silicon interface passivation layer and HfO2 gate oxide are systematically investigated at various time scales (from micro-seconds to seconds). Unlike high-kappa on silicon devices, both bulk trapping and interface trapping affect the PBTI (positive bias temperature instability) characteristics of nMOSFETs...
Using a thin germanium interfacial passivation layer (IPL), for the first time we present surface channel n- and p-MOSFETs on GaAs substrate with TaN gate electrodes and HfO2 dielectric films. We used self-aligned and gate-last processes to fabricate MOSFETs on semi-insulating GaAs substrate. The electrical results from the buried channel and the surface channel-mode transistors are investigated....
We demonstrate for the first time self-aligned, gate-first, enhancement mode n-MOSFETs with InGaAs and GaAs/InGaAs channels, Atomic Layer Deposition HfO2 gate oxide and TaN gate. Good control of the drain current was achieved due to effective passivation of the III-V-high-k interface with ultra-thin MBE in-situ grown a-Si layer. High transconductance and electron channel mobility along with negligible...
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