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This paper presents an ultra thin body Si n-TFET which exploits a multi-finger gate layout and steep junction formed by dopant implantation into silicide (IIS) process. The sub-threshold slope (SS) reaches a minimum value of about 45 mV/dec, average SS of <60mV/dec and 71mV/dec over one and three decades of drain current, respectively. A remarkable high Ion/Ioff ratio (∼109) is achieved due to...
Tunnel diode body contact (TDBC) MOSFETs is used to suppress floating body effects (FBE) and achieve significant improvement in RF performance. For the first time, low frequency noise (LF noise) of TDBC MOSFETs, also called 1/f noise, is reported in this paper. LF noise performance of floating body (FB), T-gate body contact (TB) and TDBC MOSFET fabricated in 0.13 µm Smart-Cut partially depleted (PD)...
An add-drop filter with asymmetric coupling to bus waveguides, cascaded with a notch filter, achieves diode and transistor effects, and realizes NAND and NOR logic without physically altering the device, emulating the function of neurons.
Grating couplers using CMOS poly-silicon gate layer are demonstrated, which can be integrated with electronic circuits without adding any additional process steps. Peak coupling efficiency of ∼40% and 3dB bandwidth of ∼60nm are obtained with low back reflection.
This paper presents a hardware implementation method for the SubBytes and InvSubBytes transformations of the AES in view of foregoing look-up tables (LUT) having unbreakable delay. In addition, the transformations would be exceeding complex in hardware if affine transformation in Galois Field GF(28) is employed. It will lead to slow computing speed and high cost of source. Hence decomposing method...
In this paper, we reported TCAD study on gate-all-around cylindrical (GAAC) transistor for sub-10 nm scaling. The GAAC transistor device physics, TCAD simulation have been discussed. Among all other novel FinFET devices, the gate-all-around cylindrical device can be particularly applied for reducing the problems of the conventional multi-gate FinFET and improving the device performance and the scale...
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