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We perform a detailed study of bias-temperature instabilities and hot-carrier degradation in highly-stable black phosphorus field-effect transistors and attempt to capture the correlation between these phenomena. We demonstrate that a hot-carrier stress applied in conjunction with a bias stress leads neither to a considerably stronger degradation nor to dramatically different recovery dynamics, which...
We examine highly-stable black phosphorus field-effect transistors and demonstrate that they can exhibit reproducible characteristics for over ten months. Nevertheless, we show that the performance of these devices is affected by thermally activated charge trapping in oxide traps. In order to characterize these important traps, we introduce a universal experimental technique which allows for an accurate...
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