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A novel coupled-line (CL) matched negative group delay (NGD) circuit is proposed in this paper. By loading two grounded resistors in coupling and isolation ports of CL, the presented circuit could be designed to realize the allpass bandwidth and NGD characteristic. In addition, the NGD circuit is capable of achieving input-to-output impedance transformation. To verify our proposed design, a typical...
High operation frequency and large absorbing bandwidth are often required for electromagnetic noise suppression [1]. Magnetic materials with strong anisotropy field (shape anisotropy or magnetocrystalline anisotropy), for instance FeCo nano plates [2], are needed to increase the operation frequency into the gigahertz (GHz) zone to solve the stringent problem of electromagnetic interference among the...
In summary, we have designed and fabricated a DBI for mobile DRAM I/O interface in 65nm CMOS to obtain an aggregate data throughput of 8.4Gb/s and 10Gb/s on FR4 and Roger test boards, respectively, with power consumptions of 21 mW and 25mW. The BERs for both test boards are measured as <;1x10-15 by using 223-1 PRBS from the Agilent-70843C.
We demonstrate 10Gbit/sec planar InAlAs based separated-absorption-transport-charge-multiplication avalanche photodiodes with a large active diameter (~50μm). By inserting InP transport layers, bandwidth-enhancement under 0.9Vbr has been observed, which releases internal-transient-limited bandwidth and realizes high-sensitivity 10Gbit/sec transmission.
Integrated cellular networks (ICNs) are normally constructed by adding ad hoc overlay on cellular networks to solve the latter's flexibility and capacity expansion problems. In such networks, routing plays a critical role in finding a route to divert congested traffic from a congested cell to another less crowded cell. Much work has been conducted on routing protocols in ICNs, whereas no dedicated...
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