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Using scanning tunneling microscopy (STM) and low energy electron diffraction (LEED), we have studied the structural changes of the Si(100)2x1-Sb surface caused by hydrogen adsorption at both room temperature (RT) and 300 o C. We have found that the ordering of a 2x1-Sb surface is more stable against atomic hydrogen exposure at 300 o C than at RT, and that some Sb atoms desorb during...
Using scanning tunneling microscopy and low-energy electron diffraction techniques, we have investigated the growth of indium thin films on clean and hydrogen-terminated Si(100) surfaces at room temperature. In this study, we found the ‘antisurfactant’ effect of atomic hydrogen on indium thin-film growth on the Si(100) surface. On a clean Si(100) surface, indium atoms form the mixed reconstruction...
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