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The combination of nonlinear and integrated photonics enables applications including optical signal processing, multi-wavelength lasers, metrology, spectroscopy, and quantum information science. Silicon-on-insulator (SOI) has emerged as a promising platform [1, 2] due to its high material nonlinearity and its compatibility with the CMOS industry. However, silicon suffers two-photon absorption (TPA)...
We suggest and experimentally demonstrate a photonic-crystal structure with more than 30 dB difference between forward and backward transmission levels. The non-reciprocity relies on the combination of ultrafast carrier nonlinearities and spatial symmetry breaking in a Fano structure employing a single nanocavity.
An on-chip wavelength switch is proposed based on discrete four-wave mixing in a silicon waveguide. Switching operation can be realized by thermal tuning the waveguide dispersion. We also discuss optimal dimension design concerning device performances.
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