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We have presented a method for eliminating impurities in low-purity Si films using aluminum-induced crystallization (AIC). When AIC is applied to a silicon (Si) film containing oxygen (O) and nitrogen (N) atoms, polycrystalline Si grains are grown and they are covered with an Al layer. By Auger electron spectroscopy (AES) measurement, we found that both concentrations of N and O atoms were lower than...
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