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A tungsten based reactor to grow 2-in. PVT AlN crystals by induction heating was designed. In order to investigate the effect of the hotzone structure layout on the temperature distribution in the growth chamber, a series of global quasi-steady numerical simulations with and without gas convection was performed using the FEMAG software. Simulation results show that the temperature gradient between...
By using a new double-buffer-layer (AlN/Si 3 N 4 ) technique, wurtzite-type InN(0001) epitaxial films have been grown on Si(111) substrates by nitrogen-plasma-assisted molecular beam epitaxy. In this technique, a single crystal Si 3 N 4 layer (commensurately matched to the (111) face of silicon) is used as a diffusion barrier to prevent intermixing and autodoping effects...
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