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In-band spurious tones of a LTE-class radio frequency integrated circuit (RFIC) receiver test element group (TEG) chip was studied in order to evaluate the degree of noise suppression by means of soft magnetic thin film. A 2-µm-thick crossed anisotropy multilayered Co-Zr-Nb film was applied onto the passivation layer of TEG chip. The in-band spurious was suppressed by 10 dB while it had no influence...
Intra-electromagnetic noise coupling paths from RF-digital to RF receiver front end can be either of air, wire conduction, Si substrate or package/board. In this paper air and wire conduction coupling paths analysis is discussed. A miniature magnetic near field probe is applied to scan over the test chip to map magnetic near field at LTE band 1(2.1 GHz range). The map is reviewed to extract those...
Crossed anisotropy amorphous Co85Zr3Nb12 thin film with total magnetic thickness of 2.0 μm is deposited on to the passivation of a bare IC chip to accommodate intra IC chip level digital-to-RF noise suppression and telecommunication performance. On-chip magnetic film processes can be done as the last steps of Si CMOS back end processes. Radiated emission from embedded arbitrary noise generator is...
A long term evolution (LTE)-class CMOS radio frequency integrated circuit (RFIC) receiver test element group (TEG) chip is developed in our project for the next generation cell phone handsets in order to clarify the on-chip-level noise coupling and demonstrate the noise attenuation using the soft magnetic thin film as an on-chip electromagnetic noise suppressor. The TEG chip equips a noise generator...
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