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An accurate analytical electrothermal drain current (Ids) model for AlGaN/GaN HEMTs is presented in this letter. The model is implemented into our recently proposed quasi‐physical zone division (QPZD) model for demonstration purpose. Compared with the original QPZD model, its electrothermal characteristics are enhanced by involving more fundamental temperature dependent elements. In addition, these...
In this paper, a reliable and efficient parameter extraction method for GaN high electron mobility transistor (HEMT) small‐signal models has been proposed. By utilizing parameter scanning method, the initial values of the extrinsic elements are first extracted from the cold pinch‐off and cold unbiased measurement conditions, respectively. An iterative optimization algorithm is employed then to optimize...
In this paper, a scalable and multibias parameter extraction method for gallium nitride high electron mobility transistor small‐signal model has been proposed. The main advantage of this method is that the temperature‐dependent access resistances and nonlinear thermal resistance have been taken into account, which makes the extracted access resistances and intrinsic elements more physical and reliable...
A design method for microwave GaN high‐electron mobility transistor (HEMT) power amplifier based on equivalent circuit parameters multi‐bias statistical models is presented. The statistical modeling method includes principal component analysis, factor analysis, and multiple regressions modeling techniques. The statistical model is validated by comparing original and Monte Carlo‐simulated means, standard...
This paper proposes an efficient parameter extraction algorithm for GaN high electron mobility transistors small‐signal equivalent circuit model. The algorithm combines parameter scanning and iteration methods to solve the problem of error accumulation in conventional methods and is implemented in matlab programming. By using the iteration method, the algorithm each time uses more accurate element...
This paper presents an analytical parameter extraction method for empirical large‐signal model of GaN high electron mobility transistors (HEMTs) including self‐heating and trapping effects. Every parameter in the model is extracted in an analytic way. An improved Angelov I–V model specific for GaN HEMTs with 53 parameters is employed. The I–V model parameters are divided into blocks according to their...
A novel GaN high‐electron mobility transistor (HEMT) nonlinear large‐signal statistical model based on empirical equivalent circuit is proposed in this paper. Thirty‐four GaN HEMTs from 10 batches are measured, and all the parameters of the large‐signal model are extracted by in‐house parameter extraction program. We choose six most sensitive parameters of the drain‐source current model and the gate...
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