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This letter presents a dual-mode multi-band second harmonic controlled SOI LDMOS power amplifier (PA). A mode selection switch is designed to have better power handing capability than a conventional switch, which improves performance in low power mode (LPM). To improve the PA's linearity in high power mode (HPM), second harmonic is controlled with the aid of a path for LPM. The PA, implemented with...
A fully integrated power amplifier operating at switching and linear mode is implemented using 0.18-μm CMOS technology. To maximize performance for both operation modes, the fundamental load impedances are optimized with a variable capacitor for GSM and EDGE application. For GSM application, 32 dBm of the output power with 45 % of the drain efficiency is achieved at 1.76 GHz. With EDGE modulation...
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