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We report on the results of deep level transient spectroscopy (DLTS) and capacitance-voltage studies made on U-shaped trench-gated n + -polycrystalline Si-oxide-Si capacitors. The two processing steps examined are the reactive ion etching of the trench and the thermal oxide growth between 900 and 1175 o C. The mid-gap SiO 2 /Si interface state density (~10 11 eV...
We report on the effects of channel doping on the performance and hot electron stress (HES) reliability of U-shaped trench gate metal-oxide-silicon field-effect transistors (UMOSFETs). The boron-doped n-channel UMOSFETs are examined using transistor parameters and charge pumping current measurements. It is shown that increasing boron doping of the channel degrades UMOSFETs performance via decreasing...
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