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This paper proposes a direct metal patterning method on three-dimensional structures with vertical side walls. It uses a 3-D multi-height silicon shadow mask made by double-side Deep Reactive Ion Etching (DRIE). Aluminum has been successfully patterned on the top, bottom and vertical side walls of 280mum wide trench with a depth of 250mum by sequentially tilting the wafer at three different angles...
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