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We demonstrated an unambiguous quantum dot cascade laser based on InGaAs/GaAs/InAs/InAlAs heterostructure by making use of self-assembled quantum dots in the Stranski-Krastanow growth mode and two-step strain compensation active region design. The prototype generates stimulated emission at λ ~ 6.15 μm and a broad electroluminescence band with full width at half maximum over 3 μm. The characteristic...
Spontaneous formation of InAs quantum wires in InAlAs on InP(001) via sequential chain-like coalescence of quantum dots along [110] is realized. Theoretical calculations based on the energetics of interacting steps provide a qualitative explanation for the experimental results. Sequential coalescence of initially isolated dots reduces the total free energy strikingly. Thus the wire-like structure...
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