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The recent FinFET scaling for 10–7nm node has resulted in significantly reduced contact areas for source/drain regions, leading to high contact resistance (Rc) [1-3]. Hence, it has become extremely critical to reduce the contact resistivity (ρc) to < 1×10−9Ω.cm2. ρc can be reduced by increasing the dopant concentration at the metal/semiconductor interface and by lowering the barrier height [4]...
Single-crystal germanium (Ge) offers high electron and hole mobilities and is a viable candidate for channel materials in advanced metal-oxide-semiconductor field-effect transistors (MOSFETs). This work encompasses heteroepitaxial Ge growth on silicon (Si). The focus is on trench fill by undoped Ge as well as in situ Ge doping, both p-type and n-type. These aspects of epitaxial Ge growth play important...
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