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Floating Gate (FG) NAND scaling has been severely challenged by the reduction of gate coupling ratio (CR) and increase in FG interference (FGI) below 30nm node. Firstly, scalability of inverted "T" shaped FG is evaluated by 3D electrostatics simulation. It is shown that coupling ratio (CR) and Floating Gate Interference (FGI) performance can be maintained at the level of 34nm technology...
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