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Various PVD and plasma-assisted CVD methods presently used for the deposition of cubic boron nitride (c-BN) thin films demand adequate conditions relating to ion bombardment of growing films, growth temperature, film stoichiometry, etc. The deposition conditions, often appearing rather apparatus-dependent, can be well categorized according to the fundamental parameters of bombarding ions as well as...
Boron nitride films were produced on silicon substrates by r.f. magnetron sputtering with pure argon as working gas. The cubic BN (c-BN) phase was achieved through an r.f. substrate bias which set up a controlled ion bombardment on the growing surface. The dependence of film structure on the deposition time was studied at fixed growth parameters by means of Fourier transform infrared spectroscopy,...
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