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Negative differential resistance (NDR) is an exotic quantum tunneling phenomenon that is exhibited in narrow p‐n junctions with heavy doping concentrations. However, the presence of multiple heterojunctions in a conventional tunneling device often hampers the observance of NDR and a deep understanding of its origin, particularly in 2D van der Waals heterojunctions. Herein, the emergence of quantum...
In this study, high‐performance few‐layered ReS2 field‐effect transistors (FETs), fabricated with hexagonal boron nitride (h‐BN) as top/bottom dual gate dielectrics, are presented. The performance of h‐BN dual gated ReS2 FET having a trade‐off of performance parameters is optimized using a compact model from analytical choice maps, which consists of three regions with different electrical characteristics...