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We present experimental results on high frequency field-effect transistors and fast photodetectors utilizing wafer-scale graphene grown epitaxially from silicon carbide.
Recently, the cell-based model of breakdown percolation has been generalized to deal with multilayer gate dielectric stacks. In this work, we depart from the cell-based model to derive a simple analytic compact model for the cumulative failure distribution of dual-layer stack dielectrics in terms of five parameters. The model is validated by large sample size experiments on PFET and NFET transistors...
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