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In this work, we report the selective area epitaxial growth of high quality InP in shallow trench isolation (STI) structures on Si (001) substrates 6° miscut toward (111) using a thin Ge buffer layer. We studied the impact of growth rates and steric hindrance effects on the nano-twin formation at the STI side walls. It was found that a too high growth rate induces more nano-twins in the layer and...
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