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A high performance aluminum nitride (AlN) on silicon piezoelectric resonator is reported in this paper. The resonator is fabricated based on the AlN on cavity-silicon-on-insulator (SOI) platform and vacuum encapsulated using the wafer level chip scale packaging (WLCSP) via aluminum-germanium (Al-Ge) eutectic bonding approach. After dicing, the resonator has an attractive compact size of 0.6×0.6×0...
The high penetration level of power electronics interfaced distributed generation (DG) systems creates great ancillary services potential through the DG interfacing converters, such as the grid unbalanced voltage compensation. However, the unbalanced voltage compensation may cause adverse effects on the DGs' operation, such as output active power oscillation and dc-link voltage variations. Moreover,...
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