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The U.S. Federal Communications Commission (FCC) approved the unlicensed use of ultra- wideband (UWB) (range of 3.1-10.6 GHz) for commercial purposes in 2002 [1]. The chip-set for lowband (range 3.1-4.8 GHz) application has already been developed and UWB system for lowband has been evaluated by many companies. But the chip-set for full-band (range of 3.1-10.6 GHz) is on its developing stage. Therefore,...
W-band low-noise amplifier (LNA) has been successfully demonstrated with 50 nm metamorphic HEMT (MHEMT) technologies. 50 nm MHEMT showed a gm.max of 760 mS/mm, a fT of 216 GHz, and a fmax of 400 GHz in spite of indium content of 35 % in the channel. W-band LNA with three-stage showed the small signal gain of 9.4plusmn1.8 dB from 40 GHz to 110 GHz. These results are well suited for high frequency applications.
A Ka-band monolithic microwave integrated circuit (MMIC) oscillator was implemented by using a coplanar waveguide photonic bandgap (PBG) resonator and a 0.1mum GaAs pseudomorphic high electron mobility transistor (p-HEMT). A coplanar labyrinthine one-dimensional PBG resonator was used for reduction in MMIC size. The fabricated MMIC oscillator had an output power of 6.5 dBm at 30.3 GHz and a free-running...
We have successfully demonstrated the novel HSQ based T-gate process to transfer the negative nanoscale patterns to positive patterns. This process is based on electron beam (EB) lithography, O2 plasma and BOE solution etching. Because O2 plasma etching has the high selectivity between HSQ and ZEP, HSQ patterns were exposed over the ZEP layer without any loss of pattern dimension. HSQ was then selectively...
Using the post-gate-annealing, the SiNx passivation and the post-passivation-annealing, the gate characteristics of 0.4 mum Al 0.26GaN-GaN HEMT on Si were successfully improved. With SiNx passivation using remote-plasma enhanced chemical vapor deposition, the current collapse was effectively suppressed. And it was found that annealing after passivation can improve the gate characteristics without...
77 GHz CPW low noise sub block (LNB) MMICs, which are consisted of a 3 stage LNA and a resistive mixer, have been successfully developed by using 120nm In0.4AlAs/In0.35GaAs metamorphic high electron mobility transistors (MHEMTs). The devices show an extrinsic transconductance gm of 760 mS/mm, a maximum drain current of 750 mA/mm, and a gate drain breakdown voltage of -8.5 V. A cut-off frequency (f...
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