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Heteroepitaxial growth of Cr metal on Nb‐doped SrTiO3(001) is accompanied by Cr diffusion to interstitial sites within the first few atomic planes, an anchoring of the Cr film to the substrate, charge transfer from Cr to Ti, and metallization of the near‐surface region, as depicted in the figure. The contact resistance of the resulting interface is exceedingly low.
Epitaxial Cr atoms on SrTiO3(001) generate an ideal Ohmic contact with excellent adhesion and a very low contact resistance. Scott Chambers, Meng Gu, and co‐workers show on page 4001 that this occurs because of Cr indiffusion to interstitial sites, charge transfer to Ti ions, and metalinduced downward band bending.
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