The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We have demonstrated a high sheet carrier concentration in AlGaN‐channel high‐electron‐mobility transistors (HEMTs) with AlN barrier layer. We investigate the epitaxial structure of these HEMTs by X‐ray diffraction and reveal that the partial lattice relaxation occurs in the Al0.51GaN‐channel layers on the AlN buffer layers, and that the AlN barrier layer was coherently grown on the AlGaN channel...
High Al‐composition (Al = 51%) and low Al‐composition (Al = 20%) AlGaN‐channel high‐electron‐mobility transistors (HEMTs) on AlN layers with very high carrier concentration were demonstrated. In two types of HEMTs, 2‐dimensional electron gases (2DEG) were clearly observed and peak carrier concentration and sheet carrier concentration were approximately 1020 cm‐3 and higher than 2 × 1013 cm‐2, respectively...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.