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Photoluminescence (PL) and cathodoluminescence (CL) of light emitting diode samples with various InGaN/GaN multi-quantum-well (MQW) active structures and a range of dislocation density (~7x10 8 /cm 2 to ~9x10 9 /cm 2 ) were investigated. Results indicate that threading dislocations have impact on the luminescence of GaN thin films and act as a nonradiative recombination...
The single-molecule precursors [Cd(S 2 CNMe n-Hex) 2 ] and [Bi(S 2 CNMe n-Hex) 3 ] (Me=methyl; n-Hex=n-hexyl) were used to prepare CdS/Bi 2 S 3 layers by low-pressure metal organic chemical vapour deposition (LP-MOCVD). The bilayers were deposited onto glass substrates at 400-450 o C for varying growth conditions. The materials were characterized...
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